?2000 fairchild s emiconductor cor poration fqd13n10l / FQU13N10L rev . c2 (to252) d-pak fqd13n10l / FQU13N10L n-channel qfet ? mosfet absolute maximum ratings t c = 25c unless otherwise noted thermal characteristics symbol parameter fqd13n10l / FQU13N10L unit v dss drain-source voltage 100 v i d drain current - continuous (t c = 25c) 10 a - continuous (t c = 100c) 6.3 a i dm drain current - pulsed (note 1) 40 a v gss gate-source voltage 20 v e as single pulsed avalanche energy (note 2) 95 mj i ar avalanche current (note 1) 10 a e ar repetitive avalanche energy (note 1) 4.0 mj dv/dt peak diode recovery dv/dt (note 3) 6.0 v/ns p d power dissipation (t a = 25c) * 2.5 w power dissipation (t c = 25c) 40 w - derate above 25c 0.32 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 ? from case for 5 seconds 300 c symbol parameter unit r jc thermal resistance, junction-to-case , max. 3.13 c / w r ja thermal resistance, junction-to-ambient , max. * 50 c / w r ja thermal resistance, junc tion-to-ambient , max. 110 c / w * when mounted on the m i nimum pad size recommended (pcb mount) ! " ! ! ! " " " ! " ! ! ! " " " s d g i-pak g s d g s www.fairchildsemi.com fq d13n 10l / FQU13N10L n-channel qfet ? mosfet 100 v, 10 a, 180 m? description this n -channel enhancement mode power mosfet is produced using fairchild semiconductor?s proprietary planar stripe and dmos technology. this advanced mosfet technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. these devices are suitable for switched mode power supplies, audio amplifier, dc motor control, and variable switching power applications. features ? 10 a, 60 v, r ds(on) = 1 80 m? (max) @v gs = 10 v, i d = 5. 0 a ? low gate charge (typ. 8.7 nc) ? low crss (typ. 20 pf) ? 100% avalanche tested d july 2013 (to251) fqd13n10l / FQU13N10L ? low level gate drive requirements allowing direct operation form logic drivers
?2000 fairchild sem iconductor cor poration fqd13n10l / FQU13N10L rev . c2 fqd13n10l / FQU13N10L n-channel qfet ? mosfet ( n ote 4) ( note 4) electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 1.43mh, i as = 10a, v dd = 25v, r g = 25 ?, starting t j = 25c 3. i sd 12.8a, di/dt 300a/ s, v dd bv dss, starting t j = 25c 4. essentially independent of operating temperature symbol parameter test conditions min typ max unit off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 100 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.09 -- v/c i dss zero gate voltage drain current v ds = 100 v, v gs = 0 v -- -- 1 a v ds = 80 v, t c = 125c -- -- 10 a i gssf gate-body leakage current, forward v gs = 20 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -20 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1.0 -- 2.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 5.0 a v gs = 5 v, i d = 5.0 a -- 0.142 0.158 0.18 0.2 ? g fs forward transconductance v ds = 30 v, i d = 5.0 a -- 8.7 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 400 520 pf c oss output capacitance -- 95 125 pf c rss reverse transfer capacitance -- 20 25 pf switching characteristics t d(on) turn-on delay time v dd = 50 v, i d = 12.8 a, r g = 25 ? -- 7.5 25 ns t r turn-on rise time -- 220 450 ns t d(off) turn-off delay time -- 22 55 ns t f turn-off fall time -- 72 150 ns q g total gate charge v ds = 80 v, i d = 12.8 a, v gs = 5 v -- 8.7 12 nc q gs gate-source charge -- 2.0 -- nc q gd gate-drain charge -- 5.3 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 10 a i sm maximum pulsed drain-source diode forward current -- -- 40 a v sd drain-source diode forward voltage v gs = 0 v, i s = 10 a -- -- 1.5 v t rr reverse recovery time v gs = 0 v, i s = 12.8 a, di f / dt = 100 a/ s -- 75 -- ns q rr reverse recovery charge -- 0.17 -- c www.fairchildsemi.com
?2000 fairchild sem iconductor cor poration fqd13n10l / FQU13N10L rev . c2 fqd13n10l / FQU13N10L n-channel qfet ? mosfet 0.2 0.4 0. 6 0.8 1.0 1.2 1.4 1.6 1.8 10 -1 10 0 10 1 150 notes : 1 . v gs = 0v 2. 250 s pul s e test 25 i dr , reverse d rain current [a] v sd , sourc e-drain voltage [v] 024681 0 10 -1 10 0 10 1 notes : 1. v ds = 30v 2. 250 s pu lse test -55 150 25 i d , d rain c u rrent [a] v gs , gate-s o urce voltage [v] 10 -1 10 0 10 1 10 0 10 1 v gs top : 10.0 v 8.0 v 6.0 v 5.0 v 4.5 v 4.0 v 3.5 v bottom : 3.0 v notes : 1. 250 s pulse test 2. t c = 25 i d , drai n current [a] v ds , drai n-source voltage [v] 0 1 02 03 04 0 0.0 0. 2 0. 4 0.6 0.8 v gs = 10v v gs = 5v note : t j = 25 r ds(on) [ ], drain- sour ce on-resistance i d , drai n current [a] 0481 21 6 0 2 4 6 8 10 12 v ds = 50v v ds = 80v n o te : i d = 12.8a v gs , gat e- source voltage [v] q g , total g a te charge [nc] 10 -1 10 0 10 1 200 400 600 800 1000 c iss = c gs + c gd (c ds = sh o rted) c oss = c ds + c gd c rss = c gd notes : 1 . v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacit anc e [pf] v ds , drain- source voltage [v] typical chara cteristics figure 5. c ap acitance characteristics figure 6. gate charge characteristics figure 3. on-resistance variation vs. drain current and gate voltage figure 4. body diode forward voltage variation vs. source current and temperature figure 2. transfer characteristics figure 1. on-region characteristics www.fairchildsemi.com
?2000 fairchild sem iconductor cor poration fqd13n10l / FQU13N10L rev . c2 fqd13n10l / FQU13N10L n-channel qfet ? mosfet 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 0 n ote s : 1. z jc (t) = 3 .13 /w m ax. 2. d uty f a ctor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) sing l e pulse d=0. 5 0.02 0.2 0.05 0.1 0. 0 1 z jc (t), therm al response t 1 , s q u a re w ave p ulse d u ra tion [se c] 25 50 75 100 125 15 0 0 2 4 6 8 10 i d , dr ai n current [a] t c , c a se temperature [ ] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 dc 10 ms 1 ms 100 s oper ation in this area is limited by r ds(on ) note s : 1. t c = 25 o c 2. t j = 150 o c 3. s i ngle pulse i d , dr ai n current [a] v ds , dr a in-source voltage [v] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 notes : 1. v gs = 10 v 2. i d = 5.0 a r ds(o n) , (n or malized) drain-source on-resistance t j , junc t ion temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (no r malized) drain-source breakdown voltage t j , j un c tion temperature [ o c] typical ch aracteristics (continu ed) fig u re 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 7. breakdown voltage variation vs. temperature figure 8. on-resistance variation vs. temperature figure 11. transient thermal response curve t 1 p dm t 2 www.fairch ildsemi.com
?2000 fairchild sem iconductor cor poration fqd13n10l / FQU13N10L rev . c2 fqd13n10l / FQU13N10L n-channel qfet ? mosfet charg e v gs 5v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charg e v gs 5v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut v gs v ds 10% 90% t d(on) t r t on t off t d(off ) t f v dd 5v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off ) t f v dd 5v v ds r l dut r g v gs e as =li as 2 ---- 2 1 -------- --- --------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 ---- ---- ------------ bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p gate c harge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms www.fairchildsemi.com
?2000 fairch ild s emiconductor cor por ation fqd13n10l / FQU13N10L rev . c2 fqd13n10l / FQU13N10L n-channel qfet ? mosfet peak diode recovery dv/dt test circuit & waveforms dut v ds + _ drive r r g same ty pe as dut v gs dv / dt controlled by r g i sd cont r olled by pulse period v dd l i sd 10v v gs ( dr i ver ) i sd ( dut ) v ds ( dut ) v dd body d iode forward voltage drop v sd i fm , bo dy di ode forward current body diode reverse current i rm body d iode recovery dv/dt di/dt d = ga t e pulse width gate pulse period -------------------------- dut v ds + _ drive r r g same ty pe as dut v gs dv / dt controlled by r g i sd cont r olled by pulse period v dd l l i sd 10v v gs ( dr i ver ) i sd ( dut ) v ds ( dut ) v dd body d iode forward voltage drop v sd i fm , bo dy di ode forward current body diode reverse current i rm body d iode recovery dv/dt di/dt d = ga t e pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- www.fairch ildsemi.com
?2000 fairchild sem iconductor corporation fqd13n10l / FQU13N10L rev . c2 fqd13n10l / FQU13N10L n-channel qfet ? mosfet package dimensions www.fairchildsemi.com to-252 (dpak), molded, 3lead, option aa&ab http://www.fairchildsemi.com/package/packagedetails.html?id=pn_tt25 2-0 03 d-pak package drawings a re pro vided as a service to customers considering fairchild components. drawings may change in any manner wit hout notice. please note the revision and/or date on the drawing and contact a fairchild semiconductor representative to verify or o btain the most recent revision. package specifications do not expand the terms of fairchild?s world wide terms and conditions, specifically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packagi ng area for the most recent package drawings: to-252 (dpak) molded, 3lead, option aa dimensions in millimeters
?2000 fair c h ild semiconductor cor por ation fqd13n10l / FQU13N10L rev . c2 fqd13n10l / FQU13N10L n-channel qfet ? mosfet package dimensions (continued) www.fairchildsemi.com dimensions in millimeters i-pak package drawings are provi ded as a service to customers considering fairchild components. drawings may change in any manner wit hout notice. please note the revision and/or date on the drawing and contact a fairchild semiconductor representative to verify or o btain the most recent revision. package specifications do not expand the terms of fairchild?s world wide terms and conditions, specifically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packagi ng area for the most recent package drawings: to-251 (ipak) molded, 3lead, option aa http://www.fairchildsemi.com/package/packagedetails.html?id=pn_tt25 1-003
?2000 fairchild s emiconductor corporation fqd13n10l / FQU13N10L rev . c2 fqd13n10l / FQU13N10L n-channel qfet ? mosfet www.fairchildsemi.com tradema rks the follow i ng includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. dis claimer fairchild semi c onductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchilds wo rldwide terms and conditions , specifically the warranty therein, which covers these products. life suppo rt policy fairchilds products ar e not authorized fo r use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a sign ificant injury of the user. 2. a critical component in any com ponent of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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ultra frfet ? unifet? vcx ? visualmax? voltageplus? xs? ? ? datasheet identifi cation product status definition adva nc e information for mative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor re serves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product t hat is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semi conductor corporations anti-c ounterfeiting policy. fairchilds anti-count erfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of se miconductor parts is a growing problem in the industry. all manuf actures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadv ertently purchase counterfeit parts experience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of producti on and manufacturing delays. fairchild is taki ng strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. product s customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchilds quality standards for handing and storage and provide access to fairchilds full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchil d will not provide any warranty coverage or other assistance for pa rts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping th is practice by buying direct or from authorized distributors. rev. i64 ?
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